? semiconductor components industries, llc, 2002 april, 2002 rev. 0 1 publication order number: mbt2222adw1t1/d mbt2222adw1t1 general purpose transistor npn silicon moisture sensitivity level: 1 esd rating: human body model 4 kv esd rating: machine model 400 v maximum ratings rating symbol value unit collectoremitter voltage v ceo 40 vdc collectorbase voltage v cbo 75 vdc emitterbase voltage v ebo 6.0 vdc collector current continuous i c 600 madc thermal characteristics characteristic symbol max unit total package dissipation (note 1) t a = 25 c p d 150 mw thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j , t stg 55 to +150 c 1. device mounted on fr4 glass epoxy printed circuit board using the minimum recommended footprint. device package shipping ordering information mbt2222adw1t1 sot363 3000/tape & reel marking diagram xx d xx = specific device code d = date code q 1 (1) (2) (3) (4) (5) (6) q 2 sot363/sc88 case 419b style 1 1 2 3 6 5 4 http://onsemi.com
mbt2222adw1t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 40 vdc collectorbase breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 75 vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 vdc collector cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i cex 10 nadc collector cutoff current (v cb = 60 vdc, i e = 0) (v cb = 60 vdc, i e = 0, t a = 125 c) i cbo 0.01 10 adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i bl 20 nadc on characteristics dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc, t a = 55 c) (i c = 150 madc, v ce = 10 vdc) (note 2) (i c = 150 madc, v ce = 1.0 vdc) (note 2) (i c = 500 madc, v ce = 10 vdc) (note 2) h fe 35 50 75 35 100 50 40 300 collector emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) 0.3 1.0 vdc base emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 1.2 2.0 vdc 2. pulse test: pulse width 300 s, duty cycle 2.0%.
mbt2222adw1t1 http://onsemi.com 3 smallsignal characteristics currentgain bandwidth product (note 3) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 300 mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo 25 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h ie 2.0 0.25 8.0 1.25 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h re 8.0 4.0 x 10 4 small signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h fe 50 75 300 375 output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h oe 5.0 25 35 200 mhos collector base time constant (i e = 20 madc, v cb = 20 vdc, f = 31.8 mhz) rb, c c 150 ps noise figure (i c = 100 adc, v ce = 10 vdc, r s = 1.0 k w , f = 1.0 khz) nf 4.0 db switching characteristics delay time (v cc = 30 vdc, v be ( off ) = 0.5 vdc, t d 10 ns rise time (v cc 30 vdc, v be(off) 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t r 25 ns storage time (v cc = 30 vdc, i c = 150 madc, t s 225 ns fall time (v cc 30 vdc, i c 150 madc, i b1 = i b2 = 15 madc) t f 60 ns 3. f t is defined as the frequency at which |h fe | extrapolates to unity.
mbt2222adw1t1 http://onsemi.com 4 figure 1. turnon time figure 2. turnoff time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v -2 v < 2 ns 0 1.0 to 100 m s, duty cycle 2.0% 1 k w +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 m s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf -4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region
mbt2222adw1t1 http://onsemi.com 5 figure 5. turnon time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turnoff time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 w 500 m a, r s = 200 w 100 m a, r s = 2.0 k w 50 m a, r s = 4.0 k w f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. currentgain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c
mbt2222adw1t1 http://onsemi.com 6 figure 11. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 v, voltage (volts) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500
mbt2222adw1t1 http://onsemi.com 7 package dimensions sot363/sc88 case 419b01 issue g style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 v 0.30 0.40 0.012 0.016 b 0.2 (0.008) mm 123 a g v s h c n j k 654 b d 6 pl
mbt2222adw1t1 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provid ed in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbt2222adw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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